▎ 摘　　要

Special thermal conductivity bridging is conducted between metal matrix and graphene oxide (GO) with covalent bond (Cu-O-Si-O-C) from gamma-glycidylether propyl trimethylsilane (GPTS) to decrease thermal resistance and weaken phonon scattering through interface. The implementation of this bridging process involves a pulsed electrophoretic deposition, in which the GPTS modified GO as thermal conductivity reinforcing material was deposited onto the Cu-Zn alloy. The composite morphology and interfacial structure by field emission environment scanning electron microscope shows that the GPTS-GO is uniformly deposited on the substrate surface, and there is no interlayer of the GPTS-GO/Cu differing from the GO/Cu without GPTS. Raman spectrum reveals the bonding of Cu-O-Si and Si-O-C to prove the bridging role of GPTS by structural defects of the graphene and the changes of relative characteristic peaks before and after modification, as well as the Fourier transform infrared spectrum results confirming the Cu-O-Si-O-C covalent bonds. Compared to the thermal stability and thermal conductivity by thermogravimetric analyzer from room temperature to a higher temperature of 150 degrees C for the GO/Cu sample without GPTS, the GPTS-GO/Cu exhibits significantly improved performances. The thermal conductivity achieves 415.2 and 361.9 W/mK M 50 degrees C to 150 degrees C, which is 5.01% and 6.00% higher than that of the GO/Cu, The thermal diffusion coefficient achieves 1.236 and 1.087 cm(2)/s M 50 degrees C to 150 degrees C, respectively.