• 文献标题:   Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device
  • 文献类型:   Article
  • 作  者:   ZHOU YH, QIU NX, LI RW, GUO ZS, ZHANG J, FANG JF, HUANG AS, HE J, ZHA XH, LUO K, YIN JS, LI QW, BAI XJ, HUANG Q, DU SY
  • 作者关键词:   graphene nanoribbon, firstprinciple, negative differential resistance, rectifying performance, electronic transport propertie
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601 EI 1873-2429
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   18
  • DOI:   10.1016/j.physleta.2016.01.010
  • 出版年:   2016

▎ 摘  要

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device. (C) 2016 Elsevier B.V. All rights reserved.