• 文献标题:   Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene
  • 文献类型:   Article
  • 作  者:   XU LR, CHEN LL, LI LJ, LI X
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCE
  • ISSN:   0022-2461 EI 1573-4803
  • 通讯作者地址:   Beijing Inst Technol
  • 被引频次:   4
  • DOI:   10.1007/s10853-019-03491-y
  • 出版年:   2019

▎ 摘  要

Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.