▎ 摘　　要

We have devised a method to optimize the performance of organic field-effect transistors (OFETs) by controlling the work functions of graphene electrodes by functionalizing the surface of SiO(2) substrates with self-assembled monolayers (SAMs). The electron-donating NH(2)-terminated SAMs induce strong n-doping in graphene, whereas the CH(3)-terminated SAMs neutralize the p-doping induced by SiO(2) substrates, resulting in considerable changes in the work functions of graphene electrodes. This approach was successfully utilized to optimize electrical properties of graphene field-effect transistors and organic electronic devices using graphene electrodes. Considering the patternability and robustness of SAMs, this method would find numerous applications in graphene-based organic electronics and optoelectronic devices such as organic light-emitting diodes and organic photovoltaic devices.