▎ 摘　　要

This paper reports the fabrication of a broadband near-infrared response (vis-NIR) photodetector (PD) using Cu2SnS3 (CTS) quantum dots (QDs) as photoactive semiconductor material and graphene as a carrier transport medium. The QDs of earth abundant, nontoxic, and inexpensive CTS have been synthesized by solvothermal method, and the chemical vapor deposition (CVD) technique is used to synthesize few layers and monolayers of graphene. The fabricated CTS QDs/graphene/SiO2/Si PD demonstrated high values of responsivity (similar to 110.089 A/W), detectivity (similar to 1.25 x 1(01)2 cm center dot Hz(1/2) center dot W-1), and quantum efficiency (similar to 160.9) for broadband (vis-NIR) region due to high absorption coefficient of CTSQDs and very high-mobility (similar to 200 000 cm(2) / V-s) of graphene. The time-response analysis of PD was also performed under vis-NIR and ON and OFF time were found to be 10.2 and 11.34 s.