▎ 摘　　要

The electronic transport property for a crossed junction of graphene nanoribbons with and without impurity doping is investigated numerically by a fully self-consistent non-equilibrium Green's function method combined with density functional theory. It is demonstrated that the transport property of the junction depends sensitively on both the dopant positions and the geometry of junction. Specifically, the I-V characteristics of the junction with either nitrogen- or boron-doped stems always show metallic behavior. However, the current strongly depends on the doping atomic species and sites, but slightly depends on the geometry of junction under small bias voltage. The findings here may be important in the design of graphene-based electronic devices for realizing on/off states.