• 文献标题:   Quantum interference effects in chemical vapor deposited graphene
  • 文献类型:   Article
  • 作  者:   KIM NH, SHIN YS, PARK S, KIM HS, LEE JS, AHN CW, LEE JO, DOH YJ
  • 作者关键词:   graphene, weak anti localization, universal conductance fluctuation, quantum interference
  • 出版物名称:   CURRENT APPLIED PHYSICS
  • ISSN:   1567-1739 EI 1878-1675
  • 通讯作者地址:   Korea Univ
  • 被引频次:   3
  • DOI:   10.1016/j.cap.2015.10.007
  • 出版年:   2016

▎ 摘  要

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices. (C) 2015 Elsevier B.V. All rights reserved.