▎ 摘　　要

The fusion of graphene with silicon may provide an effective solution to the problem of scale in electronic devices. This approach will allow the excellent electronic properties of graphene to be combined with known Si device technologies. We review the epitaxial growth of graphene on Si substrates (GOS) for fabricating transistors. GOS has been multifunctionalized by controlling the orientation of the Si substrate. The site-selective epitaxy of GOS has also been developed by controlling the base SiC thin films. These results demonstrate that GOS is suitable for integrated devices.