• 文献标题:   Graphene oxide assisted spontaneous growth of V2O5 nanowires at room temperature
  • 文献类型:   Article
  • 作  者:   LEE M, HONG WG, JEONG HY, BALASINGAM SK, LEE Z, CHANG SJ, KIM BH, JUN Y
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Incheon Natl Univ
  • 被引频次:   20
  • DOI:   10.1039/c4nr01780c
  • 出版年:   2014

▎ 摘  要

Graphene-decorated single crystalline V2O5 nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5 suspensions at room temperature. In this process, V2O5 nanowires (VONs) are formed spontaneously from commercial V2O5 particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5 layered structure, which was further confirmed by electron energy loss spectroscopy.