▎ 摘　　要

Temperature dependencies of both harmonic (including contributions from the "flexural" modes) and anharmonic components of theisobariclattice thermal capacity of square flakes of graphene, hexagonal boron nitride (h-BN) as well as of those of disulphides of molybdenum (MoS2) and tungsten (WS2) are simulated based on the many-body formalism denoted formerly as the "Generalized Skettrup Model" (GSM). This formalism (initially developed for the "first-principles" simulations on the essential features of electronic and optical bandtails of 3-dimensional (3D) polycrystalline and spatially non-homogeneous amorphous semi-conductors and insulators) had been refined herein for appropriate evaluations on the lattice thermal capacity of two-dimensional (2D) semiconductors. Obtained 2D GSM simulation results are discussed comparison with predictions of some other simulation approaches and results of appropriate experiments.