• 文献标题:   Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   CHAN SH, CHEN SH, LIN WT, KUO CC
  • 作者关键词:  
  • 出版物名称:   ADVANCES IN MATERIALS SCIENCE ENGINEERING
  • ISSN:   1687-8434
  • 通讯作者地址:   Natl Cent Univ
  • 被引频次:   4
  • DOI:   10.1155/2013/460732
  • 出版年:   2013

▎ 摘  要

Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM) showed the average size of the graphene domains to be about similar to 20 mu m. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET) substrate is about similar to 359 Omega/square where as that of the four-layer graphene films is about similar to 178 Omega/square, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 Omega/square. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications.