▎ 摘　　要

We report the results of a comparative investigation of graphene films prepared on Si(100) and fused silica (SiO2) combining pulsed laser deposition and rapid thermal annealing using Ni catalyst. The effect of modifying the substrate and/or growth temperature (600-1,000 degrees C) of graphene synthesis was investigated by Raman microspectroscopy mapping. Graphene grown on Si(100) was multilayered, and various nickel silicide phases had formed underneath, revealing dependence on the growth temperature. Films prepared on SiO2 mainly comprised bilayered and trilayered graphene, with no traces of nickel silicide. Analysis of Raman D, G, and 2D peak intensities and positions showed that modifying the growth temperature had different effects when a Si(100) or a SiO2 substrate is used. These findings advance our understanding of how different combinations of substrate and thermal processing parameters affect graphene synthesis from solid carbon source using nickel as a catalyst. This knowledge will enable better control of the properties of graphene film (defects, number of layers, etc.) and will have a high potential impact on the design of graphene-based devices for scientific or industrial applications.