• 文献标题:   Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices
  • 文献类型:   Article
  • 作  者:   FRIEDMAN AL, ROBINSON JT, PERKINS FK, CAMPBELL PM
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   USN
  • 被引频次:   11
  • DOI:   10.1063/1.3610565
  • 出版年:   2011

▎ 摘  要

We report gate tunable linear magnetoresistances (MRs) of similar to 600% at 12 T in metal-shunted devices fabricated on chemical vapor deposition (CVD) grown graphene. The effect occurs due to decreasing conduction through the shunt as the magnetic field increases (known as the extraordinary magnetoresistance effect) and yields an MR that is at least an order-of-magnitude higher than in un-shunted graphene devices. [doi: 10.1063/1.3610565]