▎ 摘　　要

2D structured monolayers have attracted a lot of interest for their excellent physical properties as promising channel material alternatives in the next-generation transistors. A modulation of material's specific physical properties through changing external conditions has long been applied and there exists various routes to improve the specific behavior of materials. Here, we present a systematic survey of the graphene-blue phosphorus (BP) heterojunction and focus on contacts at the surface of graphene-BP. Upon applied electric field, the n-type contacts nature at graphene-BP interfaces turn into p-type or vice versa and the corresponding Schottky barrier can be effectively tuned by various electric fields. The barrier height further decreased to 0 under - 0.1 V/angstrom and 0.35 V/angstrom. In brief, the numerical value of the barrier and the corresponding Schottky type can be flexibly regulated, which is of great importance in the design of novel transistors based 2D materials. This work would motivate the interest of research for other 2D based heterostructures and prove to be meaningful in design and the manufacture of graphene related FETs.