• 文献标题:   Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N-2 ambient
  • 文献类型:   Article
  • 作  者:   INTARO T, HODAK J, SUWANYANGYAUN P, BOTTA R, NUNTAWONG N, NIKI M, KOSUGA S, WATANABE T, KOH S, TAYCHATANAPAT T, SANORPIM S
  • 作者关键词:   graphene, directliquidinjection chemical vapor, deposition, cu foil, cyclohexane
  • 出版物名称:   DIAMOND RELATED MATERIALS
  • ISSN:   0925-9635 EI 1879-0062
  • 通讯作者地址:   Chulalongkorn Univ
  • 被引频次:   0
  • DOI:   10.1016/j.diamond.2020.107717
  • 出版年:   2020

▎ 摘  要

We synthesize graphene films by direct-liquid-injection chemical vapor deposition (DLI-CVD) method with cyclohexane precursor (C6H12) in N-2 ambient. This process offers a safer, and more economical route for large-scale graphene production in which hydrogen gas is not required. Graphene films are grown on Cu foil substrates at 890 to 980 degrees C for 10 min in the total pressure of 2 mbar. The flow rate of cyclohexane is varied between 0.2 and 0.5 g/min. The Raman results shows continuous monolayer graphene films at growth temperature of 950 degrees C and a flow rate of 0.5 g/min. Hall and field-effect measurements show mobilities in the range of 450-800 cm(2)/V.s. The relatively low D peak intensity suggests that carrier mobility is likely limited by impurities introduced to the devices during transfer process and device fabrication.