▎ 摘　　要

In the present work, we used Raman spectroscopy as sensitive tool for characterization of dispersion of electron phonon resonances in one-layer graphene. We analyzed Stokes and anti-Stokes components of the Raman spectra to investigate the temperature dependence of the graphene G-band on the power of exciting radiation. Appearance and drastic intensity increase of zone-edge D-like modes caused by introduction of structural defects and/or deformations in the graphene layer were observed in the Raman spectra at high powers of excitation. We investigated phonon dispersion of one-layer graphene for iTO phonon branch at K point along K M direction, which is involved in double-resonance Raman scattering. Raman dispersion slope of D-band is in good agreement with results of theoretical calculations based on the Green's functions approach based on the screened electron electron interaction. Deviation of the experimental iTO phonon frequency from the linear dependence on excitation energy was observed at excitation E-exc = 3.81 eV. Self-consistent classification of phonon states according to the symmetry for all dispersion branches of one-layer graphene was carried out.