• 文献标题:   Imaging of Bernal stacked and misoriented graphene and boron nitride: experiment and simulation
  • 文献类型:   Article
  • 作  者:   ZAN R, BANGERT U, RAMASSE Q, NOVOSELOV KS
  • 作者关键词:   bn, graphene, simulation, stem, tem
  • 出版物名称:   JOURNAL OF MICROSCOPY
  • ISSN:   0022-2720 EI 1365-2818
  • 通讯作者地址:   Univ Manchester
  • 被引频次:   15
  • DOI:   10.1111/j.1365-2818.2011.03520.x
  • 出版年:   2011

▎ 摘  要

Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono- and few-layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.