▎ 摘　　要

We demonstrate a large area MoS2/graphene barristor, using a transfer-free method for producing 3-5 monolayer (ML) thick MoS2. The gate-controlled diodes show good rectification, with an ON/OFF ratio of similar to 10(3). The temperature dependent back-gated study reveals Richardson's coefficient to be 80.3 +/- 18.4 A/cm(2)/K and a mean electron effective mass of (0.66 +/- 0.15)m(0). Capacitance and current based measurements show the effective barrier height to vary over a large range of 0.24-0.91 eV due to incomplete field screening through the thin MoS2. Finally, we show that this barristor shows significant visible photoresponse, scaling with the Schottky barrier height. A response time of similar to 10 s suggests that photoconductive gain is present in this device, resulting in high external quantum efficiency. Published by AIP Publishing.