▎ 摘　　要

We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2-20 kJ cm(-2). We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I-G/I-D and I-G/I-2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/square and similar to 1 mu m film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.