• 文献标题:   Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   MAHAPATRA PS, SARKAR K, KRISHNAMURTHY HR, MUKERJEE S, GHOSH A
  • 作者关键词:   twisted bilayer graphene, thermoelectricity, seebeck coefficient, mott formula, phonon drag
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Indian Inst Sci
  • 被引频次:   10
  • DOI:   10.1021/acs.nanolett.7b03097
  • 出版年:   2017

▎ 摘  要

When two planar atomic membranes are placed within the van der Waals distance, the charge and heat transport across the interface are coupled by the rules of momentum conservation and structural commensurability, leading to outstanding thermoelectric properties. Here we show that an effective "interlayer phonon drag" determines the Seebeck coecient (S) across the van der Waals gap formed in twisted bilayer graphene (tBLG). The cross-plane thermovoltage, which is nonmonotonic in both temperature and density, is generated through scattering of electrons by the out-of-plane layer breathing (ZO'/ZA(2)) phonon modes and differs dramatically from the expected Landauer-Buttiker formalism in conventional tunnel junctions. The tunability of the cross-plane Seebeck effect in van der Waals junctions may be valuable in creating a new genre of versatile thermoelectric systems with layered solids.