• 文献标题:   Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping
  • 文献类型:   Article
  • 作  者:   PARK J, LEE JH, LEE GH, TAKANE Y, IMURA KI, TANIGUCHI T, WATANABE K, LEE HJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   6
  • DOI:   10.1103/PhysRevLett.120.077701
  • 出版年:   2018

▎ 摘  要

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current I-c. The product of I-c and the normal-state junction resistance R-N, normalized by the zero-temperature gap energy Delta(0) of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, I-c shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit.