▎ 摘　　要

Graphene quantum dots (GQDs) prepared by pulsed laser ablation in liquid (PLAL) process face barriers to commercialization due to their poor optical properties and the use of expensive carbon precursors. In this work, we report a one-step route for the preparation of N-doped graphene quantum dots (NGQDs) with excellent optical properties using a low-cost carbon precursor. The as-prepared NGQDs exhibited excellent optical properties and high quantum yield compared to pristine graphene quantum dots (0.8% -> 9.1%) due to the presence of the N atoms. A possible recombination mechanism of NGQDs was investigated by time-resolved photoluminescence spectroscopy. The increase of N atoms incorporated in the GQDs resulted in an increased fraction of the short recombination lifetime from the intrinsic state. We also report a possible mechanism for the formation of the N atoms in the GQDs structure during the PLAL process, which is explained based on the plasma plume, cavitation collapse, and nitrogen precursor decomposition model.