• 文献标题:   Capacitive coupling in hybrid graphene/GaAs nanostructures
  • 文献类型:   Article
  • 作  者:   SIMONET P, ROSSLER C, KRAHENMANN T, VARLET A, IHN T, ENSSLIN K, REICHL C, WEGSCHEIDER W
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Swiss Fed Inst Technol
  • 被引频次:   1
  • DOI:   10.1063/1.4926855
  • 出版年:   2015

▎ 摘  要

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could, in principle, be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials. (C) 2015 AIP Publishing LLC.