• 文献标题:   Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure
  • 文献类型:   Article
  • 作  者:   YOO JS, PARK YW, SKAKALOVA V, ROTH S
  • 作者关键词:   aharonovbohm effect, electronic density of state, graphene, landau level, magnetoresistance, nanostructured material
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   19
  • DOI:   10.1063/1.3380616
  • 出版年:   2010

▎ 摘  要

We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.