• 文献标题:   Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy
  • 文献类型:   Article
  • 作  者:   HUANG MY, YAN HG, HEINZ TF, HONE J
  • 作者关键词:   graphene, raman spectroscopy, strain, electronic structure
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Columbia Univ
  • 被引频次:   240
  • DOI:   10.1021/nl102123c
  • 出版年:   2010

▎ 摘  要

Two-phonon Raman scattering in graphitic materials provides a distinctive approach to probing the material's electronic structure through the spectroscopy of phonons Here we report studies of Raman scattering of the two-dimensional mode of single-layer graphene under uniaxial stress and which implicates two types of modification of the low-energy electronic structure of graphene a deformation of the Dirac cone and its displacement away from the K point