• 文献标题:   Facile technique for the removal of metal contamination from graphene
  • 文献类型:   Article
  • 作  者:   WELLS GH, HUNT MRC, HOPF T, VASSILEVSKI KV, ESCOBEDOCOUSIN E, HORSFALL AB, GOSS JP, O NEILL A
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Univ Durham
  • 被引频次:   1
  • DOI:   10.1116/1.4928422
  • 出版年:   2015

▎ 摘  要

Metal contamination deposited on few-layer graphene (3 +/- 1 monolayers) grown on SiC(0001) was successfully removed from the surface, using low cost adhesive tape. More than 99% of deposited silver contamination was removed from the surface via peeling, causing minimal damage to the graphene. A small change in the adhesion of graphene to the SiC(0001) substrate was indicated by changes observed in pleat defects on the surface; however, atomic resolution images show the graphene lattice remains pristine. Thin layers of contamination deposited via an electron gun during Auger electron spectroscopy/low energy electron diffraction measurements were also found to be removable by this technique. This contamination showed similarities to "roughened" graphene previously reported in the literature. (C) 2015 American Vacuum Society.