▎ 摘　　要

A numerical model has been proposed to explain the antihysteresis behavior of the resistivity of graphene on a Pb(Zr (x) Ti1 - x )O-3 ferroelectric substrate with a change in the gate voltage. The model takes into account the screening of the electric field in the substrate by electrons trapped in states connected with the graphene-ferroelectric interface and describes the previously obtained experimental dependences. The estimates can be important for creating elements of new-generation energy-independent memory using two stable resistivity values that appear in the antihysteresis effect; logical 0 and 1 are assigned to these two values.