▎ 摘　　要

In order to explore the influence of thermal reduction temperature on the humidity sensitivity of graphene oxide (GO), we treat the prepared graphene oxide (GOS) thin film under different temperature conditions and obtained the GOS thin film humidity elements of different reduction degrees. Thermostability, function groups, and structural defects of the GOS samples are characterized by TGDTA, FTIR, and Raman. After thermal reduction at 60 and 100 degrees C, the function groups of GOS are not decomposed and the GOS has better humidity sensitivity and shows the characteristics of n-type semiconductor. After thermal reduction at 150-200 degrees C, the function groups are decomposed and the humidity sensitivity is decreased due to thermal reduction on GOS. Particularly, the GOS shows the characteristics of p-type semiconductor in the relative humidity lower than 75.3%, and shows the characteristics of n-type semiconductor in the relative humidity higher than 75.3%. After thermal reduction at 250 degrees C, the GOS thin film has no humidity sensitivity. After thermal reduction at 300-450 degrees C, the carbon skeleton of GOS is combusted to form new structure defects and the humidity sensitivity is getting better, and the GOS shows the characteristics of p-type semiconductor.