▎ 摘　　要

Tungsten-substituted molybdenum disulfide (Mo-1 - xWxS2) shows excellent semiconductor properties related to the adjustable band gap structure. Mo-1 - xWxS2 is an n-type semiconductor that has high carrier mobility, adjustable electrical characteristics. Graphene, the thinnest two-dimensional material, shows good thermal conductivity and high carrier mobility. The oxygen adsorption effects of graphene permit precise control of its Fermi level and semiconductor properties. We combined Mo-1 - xWxS2 films with graphene oxide (GO) in this study to fabricate a pn interface and thoroughly research the energy band and electrical properties for a heterojunction diode. According to the results, the Mo-1 - xWxS2 electron affinity decreases with increasing x value of tungsten (W) composition (x = 0.0-1.0, triangle x = 0.2). The IV characteristics of the Mo-1 - xWxS2/GO heterojunction diodes can be accurately tuned by conduction band bowing effect with different W composition of the Mo-1 - xWxS2 films. By applying our fabricating method, the Mo-1 - xWxS2 with different W composition provides a new application of semiconductor device. In this study we using Mo-1 - xWxS2 films and GO to fabricate a heterojunction diode, it shows different electrical properties with different x value of Mo-1 - xWxS2. The Mo-1 - xWxS2 electron affinity decreases with increasing of W composition x value (x = 0.0-1.0, triangle x = 0.2). The Mo-1 - xWxS2/GO heterojunction diode I-V characteristics can be accurately tuned using the conduction band bowing effect with different W compositions. Mo-1 - xWxS2 with different W compositions using our fabrication method provides new semiconductor device applications. (C) 2016 Elsevier B.V. All rights reserved.