• 文献标题:   Performance projections for ballistic graphene nanoribbon field-effect transistors
  • 文献类型:   Article
  • 作  者:   LIANG GC, NEOPHYTOU N, NIKONOV DE, LUNDSTROM MS
  • 作者关键词:   ballistic, bandstructure, carbon, current density, graphite, mosfet, nanotechnology, nanowire, quantum confinement
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Purdue Univ
  • 被引频次:   182
  • DOI:   10.1109/TED.2007.891872
  • 出版年:   2007

▎ 摘  要

The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. We calculate the bandstructure of nanoribbons using a single p(z)-orbital tight-binding method and evaluate the current-voltage characteristics of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting ribbons. a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. Our calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications.