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  • 文献标题:   Graphene oxide thin films for resistive memory switches
  • 文献类型:   Article
  • 作　　者:   BANERJEE I, HARRIS P, SALIMIAN A, RAY AK
  • 作者关键词:   indium compound, graphene, spin coating, metallic thin film, xray diffraction, raman spectra, ultraviolet spectra, visible spectra, memristor, resistive ram, switche, multilayer, sputter deposition, resistive memory switche, graphene oxide thin film, voltage controlled negative differential resistance, conduction characteristic, spin coated film, indium tin oxide substrate, ito substrate, top electrode, sputtered gold film, go crystallite, xray diffraction, raman spectroscopy, multilayer stack, uv visible spectroscopy, band gap, twoterminal itogoau device, memristor characteristic, scanrate dependent hysteresi, temperature 293 k to 298 k, size 300 nm, itocoau
  • 出版物名称:   IET CIRCUITS DEVICES SYSTEMS
  • ISSN:   1751-858X EI 1751-8598
  • 通讯作者地址:   Birla Inst Technol
  • 被引频次:   8
  • DOI:   10.1049/iet-cds.2015.0170
  • 出版年:   2015

▎ 摘　　要

The presence of voltage controlled negative differential resistance was observed in conduction characteristics recorded at room temperature for 300 nm thick spin-coated films of graphene oxide (GO) sandwiched between indium tin oxide (ITO) substrates and top electrodes of sputtered gold (Au) film. The GO crystallites were found from the X-ray diffraction studies to have an average size in the order of 7.24 nm and to be preferentially oriented along (001) plane. Raman spectroscopy suggested that the material consisted of multilayer stacks with the defects being located at the edges with an average distance of 1.04 nm apart. UV visible spectroscopy studies suggested that the band gap of the material was 4.3 eV, corresponding to direct transitions. The two-terminal ITO/GO/Au devices exhibited memristor characteristics with scan-rate dependent hysteresis, threshold voltage and On/Off ratios. A value of >10(4) was obtained for On/Off ratio at a scan rate of 400 mVs(-1) and 4.2 V.