• 文献标题:   Disorder induced localized states in graphene
  • 文献类型:   Article
  • 作  者:   PEREIRA VM, GUINEA F, DOS SANTOS JMBL, PERES NMR, CASTRO NETO AH
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Boston Univ
  • 被引频次:   426
  • DOI:   10.1103/PhysRevLett.96.036801
  • 出版年:   2006

▎ 摘  要

We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close to the Fermi level. We also study the problem of a finite density of vacancies, obtaining the electronic density of states, and discussing the issue of electronic localization in these systems. Our results also have relevance for the problem of disorder in d-wave superconductors.