• 文献标题:   Mesoscopic conductance fluctuations in graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   HORSELL DW, SAVCHENKO AK, TIKHONENKO FV, KECHEDZHI K, LERNER IV, FAL KO VI
  • 作者关键词:   nanostructure, impurities in semiconductor, electronic transport, quantum localization
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Univ Exeter
  • 被引频次:   42
  • DOI:   10.1016/j.ssc.2009.02.058
  • 出版年:   2009

▎ 摘  要

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures. (C) 2009 Elsevier Ltd. All rights reserved.