▎ 摘　　要

The heterojunction photodetector based on zero-dimensional (0-D) PbS quantum dots (QDs) and two-dimensional (2-D) graphene combines the strong light absorption capacity of QDs, adjustable band gap, simple process and other advantages with the higher carrier mobility of graphene, which significantly improves the responsivity and detection rate of the photodetector. In the paper, a photodetector based on the combination of P-InP substrate, graphene and PbS QDs is explored. With the help of Al2O3 passivation of InP substrate, ligand replacement method passivation of PbS QDs, the device shows a unique photoresponse at 808 nm, reaching a detection rate of 145 mAW(-1) responsivity under a bias of 1.1 V. The work is expected to provide a strategy for manufacturing and investigating high-performance and low-cost hybrid photodetectors.