▎ 摘　　要

The present study reports the role of zinc oxide nanoparticles (ZnO NPs) embedded in graphene oxide (GO)-based RRAM for non-volatile memory applications. GO thin film embedded with different concentrations of ZnO NPs was deposited on bottom electrode, i.e., indium tin oxide (ITO) coated glass. Thermal evaporation technique was used for the fabrication of top electrodes for electrical measurements. Structural and morphological studies of synthesized GO and ZnO NPs were done by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR). Switching characteristics of the RRAM devices were investigated using electrical measurements. It has been observed that the optimized concentration of ZnO NPs (20%) shows stable switching behavior with low SET (- 0.61 V) and RESET (+ 0.65 V) voltages as compared to pure GO devices. The switching of the fabricated memory devices from high resistance state (HRS) to low resistance state (LRS) has been found due to conductive filament formed between top and bottom electrodes. This conductive filament has been confirmed by the change in resistance as a function of temperature. The Al/GO-ZnO(20%)/ITO devices show stable endurance behavior for > 50 cycles and retention behavior for > 4 x 10(3) s. In HRS, the dominated conduction mechanism was found to be space-charge limited conduction (SCLC), whereas in LRS, the Ohmic conduction mechanism was observed. The incorporation of ZnO NPs increased the number of oxygen vacancies in switching layer which eventually enhanced the formation of conductive filament. This phenomenon has been confirmed using XPS characterization of the switching layer. These optimized concentrations of ZnO embedded in GO switching layers provide a way for future low power non-volatile memory devices.