• 文献标题:   Graphene- and Phosphorene-like Boron Layers with Contrasting Activities in Highly Active Mo2B4 for Hydrogen Evolution
  • 文献类型:   Article
  • 作  者:   PARK H, ZHANG YM, SCHEIFERS JP, JOTHI PR, ENCINAS A, FOKWA BPT
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • ISSN:   0002-7863
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   25
  • DOI:   10.1021/jacs.7b07247
  • 出版年:   2017

▎ 摘  要

Two different boron layers, flat (graphene-like) and puckered (phosphorene-like), found in the crystal structure of Mo2B4 show drastically different activities for hydrogen evolution, according to Gibbs free energy calculations of H-adsorption on Mo2B4. The graphene-like B layer is highly active, whereas the phosphorene-like B layer performs very poorly for hydrogen evolution. A new Sn-flux synthesis permits the rapid single-phase synthesis of Mo2B4, and electrochemical analyses show that it is one of the best hydrogen evolution reaction active bulk materials with good long-term cycle stability under acidic conditions. Mo2B4 compensates its smaller density of active sites if compared with highly active bulk MoB2 (which contains only the more active graphene-like boron layers) by a 5-times increase of its surface area.