▎ 摘　　要

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of similar to 40, and a peak sensitivity of similar to 12 V-1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices. (C) 2014 AIP Publishing LLC.