• 文献标题:   Reduced Graphene Oxide Thin Films as Ultrabarriers for Organic Electronics
  • 文献类型:   Article
  • 作  者:   YAMAGUCHI H, GRANSTROM J, NIE WY, SOJOUDI H, FUJITA T, VOIRY D, CHEN MW, GUPTA G, MOHITE AD, GRAHAM S, CHHOWALLA M
  • 作者关键词:   gas barrier, graphene oxide, solution processing, organic electronic
  • 出版物名称:   ADVANCED ENERGY MATERIALS
  • ISSN:   1614-6832 EI 1614-6840
  • 通讯作者地址:   Rutgers State Univ
  • 被引频次:   39
  • DOI:   10.1002/aenm.201300986
  • 出版年:   2014

▎ 摘  要

Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (approximate to 10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications.