▎ 摘　　要

The heteroepitaxial growth of lattice mismatched layers is crucial for modern semiconductor device fabrication, but it is a significant challenge in epitaxy. Growth of lattice mismatched materials creates strain in the epitaxial layer, which is usually relaxed by introducing crystal defects deteriorating the device performance. Remote epitaxy on graphene covered substrates was recently proposed to offer a different relaxation pathway for the strained films. Here, we report on the remote heteroepitaxy growth by molecular beam epitaxy (MBE) of InxGa(1-x)As-layers (0 < x ]