• 文献标题:   Metal oxide-resistive memory using graphene-edge electrodes
  • 文献类型:   Article
  • 作  者:   LEE S, SOHN J, JIANG ZZ, CHEN HY, WONG HSP
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   42
  • DOI:   10.1038/ncomms9407
  • 出版年:   2015

▎ 摘  要

The emerging paradigm of 'abundant-data' computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three-dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory (similar to 3 angstrom thick) stacked in a vertical three-dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the three-dimensional architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.