▎ 摘　　要

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2-graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2-graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2-metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2-graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.