• 文献标题:   Electronic states of graphene grain boundaries
  • 文献类型:   Article
  • 作  者:   MESAROS A, PAPANIKOLAOU S, FLIPSE CFJ, SADRI D, ZAANEN J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Leiden Univ
  • 被引频次:   61
  • DOI:   10.1103/PhysRevB.82.205119
  • 出版年:   2010

▎ 摘  要

We introduce a model for amorphous grain boundaries in graphene and find that stable structures can exist along the boundary that are responsible for local density of states enhancements both at zero and finite (similar to 0.5 eV) energies. Such zero-energy peaks, in particular, were identified in STS measurements [J. Cervenka, M. I. Katsnelson, and C. F. J. Flipse, Nat. Phys. 5, 840 (2009)] but are not present in the simplest pentagon-heptagon dislocation array model [O. V. Yazyev and S. G. Louie, Phys. Rev. B 81, 195420 (2010)]. We consider the low-energy continuum theory of arrays of dislocations in graphene and show that it predicts localized zero-energy states. Since the continuum theory is based on an idealized lattice scale physics it is a priori not literally applicable. However, we identify stable dislocation cores, different from the pentagon-heptagon pairs that do carry zero-energy states. These might be responsible for the enhanced magnetism seen experimentally at graphite grain boundaries.