• 文献标题:   A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy
  • 文献类型:   Article
  • 作  者:   XU P, YANG YR, QI D, BARBER SD, ACKERMAN ML, SCHOELZ JK, BOTHWELL TB, BARRAZALOPEZ S, BELLAICHE L, THIBADO PM
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Arkansas
  • 被引频次:   13
  • DOI:   10.1063/1.4716475
  • 出版年:   2012

▎ 摘  要

Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional theory. First-principle calculations identify that the low-energy barrier direction of the top layer displacement is toward a structure where none of the carbon p(z) orbitals overlap, while the high-energy barrier direction is toward AA stacking. Each directional shift yields a real-space surface charge density similar to graphene; however, the low-energy barrier direction requires only one bond length to convert ABA (Bernal) to ABC (rhombohedral). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4716475]