▎ 摘　　要

Indium tin oxide (ITO)/poly[N-9 '-heptadecanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2 ',1 ',3 '-benzothiadiazole)] (PCDTBT):graphene/Al structures have been elaborated. By applying a specific elaboration method, we succeeded in dispersing expandable graphene oxide in organic solvent (N,N-dimethylformamide, DMF) to obtain graphene oxide and insert it into a PCDTBT matrix. The effect of annealing treatment of PCDTBT:graphene films on the optical and electrical properties were studied. The obtained results showed a remarkable effect of the annealing treatment on the optoelectronic properties. The ultraviolet-visible (UV-Vis) spectra showed that the light harvesting was increased and the orderly stacking of the polymer chains was enhanced. The photoluminescence results showed a red-shift of about 10 nm in case of heat treatment at 150 degrees C, related to an increase of the conjugation length of the polymer chains. The electrical parameters, such as the series resistance (R-s), ideality factor (n), and barrier height (phi(b)), were calculated. We found that thermal annealing reduced both the series resistance R-s and barrier height value phi(b), significantly. These results indicate that annealing treatment improves the transport phenomenon in the active layer. In addition, the Log(J)-Log(V) curves suggested that the charge transport is governed by a space-charge-limited mechanism current. The effective carrier mobility (mu(eff)) was on the order of 10(-5) cm(2)/V.