▎ 摘　　要

Carbon nanotubes (CNT) and graphene nanoribbons (GNR) field-effect transistors (FETs) are promising devices that could bring massive changes to semiconductor technology. These devices' superior electrical properties in comparison to silicon based devices propel intensive research and development of carbon-based technology that can potentially replace silicon in the semiconductor industry. Low Dimensional Simulator (LODISI), a quantum mechanics simulation tool developed by the Universiti Teknologi Malaysia using MATLAB, is presented as a graphical user interface (GUI) for the simulation of ballistic n-type and p-type CNTFETs or GNRFETs. This simulator is based on the top-of-the-barrier approach and a combination of previous modelling frameworks on carbon-based devices. LODISI includes two types of quasi-one dimensional device simulations, namely, LODISI-CNT and LODISI-GNR. Users can perform quick analysis based on more than 10 variations of physical and electrical parameters and generate the metric performance within seconds of launching and running the application. These results are presented in two-dimensional plots. Our significant achievement includes the assessment of such performance metrics as voltage transfer characteristic (VTC), drain-induced barrier lowering (DIBL), subthreshold swing (SS) and inverter gain. Moreover, LODISI has unique functionality that enables users to generate voltage transfer curves directly from the complementary nanotransistor drain characteristics. This simulator functions as a standalone executable software in the Windows platform.