▎ 摘　　要

Growth of graphene doped with the low level of nitrogen is carried out on the copper foil by conventional chemical vapor deposition. Melamine is used as nitrogen source. Melamine vapor is generated by heating and carried by an argon flow (carrier flow) to a main flow of Ar including methane. Ratio of the number of molecules, melamine/ methane, is controlled by changing the mixing rate of the carrier flow and the main flow. Measurements of Raman scattering, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy and sheet resistance clarify the feature of prepared sample. At low melamine/methane ratio in the order of 10(-3), quaternary N doped graphene is grown. Then the growth of pyridinic N doped graphene is going to start as increasing the melamine/methane ratio in the order of 10(-2). Magnitude of the sheet resistance per one graphene layer decreases by similar to 75% when the nitrogen is in the quaternary site, while it increases twice or more when the pyridine-like configuration increases.