• 文献标题:   Localization and electron-electron interactions in few-layer epitaxial graphene
  • 文献类型:   Article
  • 作  者:   LO ST, LIU FH, HSU CS, CHUANG C, HUANG LI, FUKUYAMA Y, YANG YF, ELMQUIST RE, LIANG CT
  • 作者关键词:   graphene, interaction, localization
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Natl Taiwan Univ
  • 被引频次:   3
  • DOI:   10.1088/0957-4484/25/24/245201
  • 出版年:   2014

▎ 摘  要

This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.