▎ 摘　　要

Electroluminescent (EL) properties of Ir(III) complex, [(2,4-diphenylquinoli-ne)](2)Iridium picolinic acid N-oxide [(DPQ)(2)Ir(pic-N-O)] were investigated using PEDOT:PSS and reduced graphene oxide (rGO) as a hole transport layer for solution processable phosphorescent organic light-emitting diodes (PhOLEDs). High performance solution-processable PhOLED with PEDOT:PSS and (DPQ)(2)Ir(pic-N-O) (8wt%) doped CBP:TPD:PBD (8:56:12) host emission layer were fabricated to give a high luminance efficiency (LE) of 26.9 cd/A, equivelent to an external quantum efficiency (EQE) of 14.2%. The corresponding PhOLED with rGO as a hole transport layer exhibited the maximum brightness and LE of 13540 cd/m(2) and 16.8 cd/A, respectively. The utilization of the solution processable rGO thin films as the hole transport layer offered the great potential to the fabrication of solution processable PhOLEDs.