▎ 摘 要
We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 k Omega. (C) 2012 Elsevier B.V. All rights reserved.