▎ 摘　　要

Epitaxial Chemical Vapor Deposition graphene on silicon carbide is a promising material for application in electronics. Its most developed form, i.e. quasi-free-standing monolayer that comes through hydrogen atom intercalation of carbon buffer layer grown on the Si-face of SiC, constitutes an excellent platform for sensor technology. Raman spectroscopy allows for a non-destructive analysis of graphene properties. The G and 2D bands widths and positions bring information on the number of graphene layers as well as charge carrier type and doping level. Their intensity is strong. However, the analysis of Si-H bonds remains a challenge. In this work we present how analytical methods can improve the visibility of hydrogen-related Raman bands and help monitor hydrogen presence in quasi-free-standing graphene.